ipp041n12n3gxksa1

Introducing the new IPP041N12N3GXKSA1, a high-performance lateral Power MOSFET designed for a wide range of industrial and automotive applications. With a maximum drain current of 180A and a low on-state resistance of 4.1mΩ, this MOSFET offers excellent power efficiency and performance. The IPP041N12N3GXKSA1 is built with Infineon's latest 1200V CoolMOS™ N-channel technology, providing superior switching characteristics and enhanced reliability. Its rugged construction allows for high pulse current capability, making it a reliable choice for demanding applications. Equipped with an advanced thermal management capability, this MOSFET ensures efficient heat dissipation, enabling high power density designs. Additionally, its low gate charge and internal ESD protection enhance system robustness and safety. With these features, the IPP041N12N3GXKSA1 MOSFET is ideal for applications such as motor drives, switch mode power supplies, and electric vehicle charging systems. Choose the IPP041N12N3GXKSA1 for dependable and high-performance power management solutions.