irf610pbf

Introducing the IRF610PBF, a power MOSFET transistor designed for high voltage and high power applications. With a maximum drain-source voltage of 200V and a continuous drain current of 3.3A, this transistor is ideal for a wide range of power management and switching applications. Its low on-state resistance of 0.54 ohms allows for efficient power conversion, while its fast switching performance ensures reliable operation in demanding environments. The IRF610PBF is housed in a TO-220 package, providing easy installation and heat dissipation. This power MOSFET is suitable for use in power supplies, motor control, and other high power electronic systems. With its exceptional performance and reliability, the IRF610PBF is the ideal choice for engineers and designers looking for a robust and efficient power transistor solution.