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Micron Technology Inc. 29F1G16ABBEAM68M3WC2
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| Parameters | |
|---|---|
| Mfr | Micron Technology Inc. |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 1Gbit |
| Memory Organization | 64M x 16 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | - |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | - |
| Package / Case | - |
| Supplier Device Package | - |
| Base Product Number | MT29F1G16 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | OBSOLETE |
| HTSUS | 0000.00.0000 |
| Standard Package | 1 |
FLASH - NAND Memory IC 1Gbit Parallel
