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Micron Technology Inc. 58L512Y32DT-10
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| Parameters | |
|---|---|
| Write Cycle Time - Word, Page | - |
| Access Time | 5 ns |
| Voltage - Supply | 3.135V ~ 3.465V |
| Operating Temperature | 0°C ~ 70°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 100-LQFP |
| Supplier Device Package | 100-TQFP (14x20.1) |
| RoHS Status | RoHS non-compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 1 |
| Mfr | Micron Technology Inc. |
| Series | SYNCBURST™ |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Standard |
| Memory Size | 18Mbit |
| Memory Organization | 512K x 32 |
| Memory Interface | Parallel |
| Clock Frequency | 100 MHz |
SRAM - Standard Memory IC 18Mbit Parallel 100 MHz 5 ns 100-TQFP (14x20.1)
