scth90n65g2v-7

Introducing the SCTH90N65G2V-7, a high-voltage, N-channel power MOSFET designed for high-speed switching applications. This cutting-edge MOSFET boasts a 650V breakdown voltage, making it ideal for use in a wide range of power electronics devices. With its low on-resistance and high switching speed, the SCTH90N65G2V-7 offers exceptional performance and efficiency, enabling designers to maximize power density and minimize energy losses in their applications. The SCTH90N65G2V-7 features advanced shielded-gate technology for enhanced ruggedness and reliability, ensuring long-term stability and performance in demanding operating conditions. Its innovative design and robust construction make it suitable for use in power supplies, motor drives, and other high-power applications. With industry-leading thermal characteristics and a compact footprint, this power MOSFET sets a new standard for power management solutions. Whether you're designing for industrial, automotive, or renewable energy applications, the SCTH90N65G2V-7 delivers the power and efficiency you need.