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Cypress Semiconductor Corp S34MS04G100BHI000
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| Parameters | |
|---|---|
| Mfr | Cypress Semiconductor Corp |
| Series | MS-1 |
| Package | Tray |
| Product Status | Active |
| Memory Type | Non-Volatile |
| Memory Format | FLASH |
| Technology | FLASH - NAND |
| Memory Size | 4Gbit |
| Memory Organization | 512M x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 45ns |
| Access Time | 45 ns |
| Voltage - Supply | 1.7V ~ 1.95V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 63-VFBGA |
| Supplier Device Package | 63-BGA (11x9) |
| Base Product Number | S34MS04 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B1A |
| HTSUS | 8542.32.0071 |
| Other Names | 1274-1100 |
| Standard Package | 210 |
FLASH - NAND Memory IC 4Gbit Parallel 45 ns 63-BGA (11x9)
