Parameters |
Mfr |
Fairchild Semiconductor |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
1 A |
Voltage - Collector Emitter Breakdown (Max) |
80 V |
Vce Saturation (Max) @ Ib, Ic |
500mV @ 50mA, 500mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
40 @ 150mA, 2V |
Power - Max |
625 mW |
Frequency - Transition |
200MHz |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package |
TO-92 (TO-226) |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.21.0075 |
Standard Package |
2,000 |
Bipolar (BJT) Transistor NPN 80 V 1 A 200MHz 625 mW Through Hole TO-92 (TO-226)