Parameters |
Mfr |
Fairchild Semiconductor |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Transistor Type |
NPN - Pre-Biased |
Current - Collector (Ic) (Max) |
100 mA |
Voltage - Collector Emitter Breakdown (Max) |
40 V |
Resistor - Base (R1) |
4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
100 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
Frequency - Transition |
250 MHz |
Power - Max |
300 mW |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package |
TO-92-3 |
Base Product Number |
FJN330 |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.21.0075 |
Standard Package |
2,000 |
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 100 mA 250 MHz 300 mW Through Hole TO-92-3