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Fairchild Semiconductor FQAF10N80
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| Parameters | |
|---|---|
| Mfr | Fairchild Semiconductor |
| Series | QFET® |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 6.7A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 3.35A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 71 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 113W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-3PF |
| Package / Case | TO-3P-3 Full Pack |
| RoHS Status | ROHS3 Compliant |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 360 |
N-Channel 800 V 6.7A (Tc) 113W (Tc) Through Hole TO-3PF
