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Fairchild Semiconductor FQAF10N80

FQAF10N80


  • Manufacturer: EMAC, Inc.
  • Chip 1 Group NO: FQAF10N80
  • Price: $1.67
  • Datasheet: PDF
  • Description: FQAF10N80(Kg)
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Details

Tags

Parameters
Mfr Fairchild Semiconductor
Series QFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 6.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.05Ohm @ 3.35A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 113W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-3PF
Package / Case TO-3P-3 Full Pack
RoHS Status ROHS3 Compliant
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 360
N-Channel 800 V 6.7A (Tc) 113W (Tc) Through Hole TO-3PF