Call Us: 1(8457) SAMSON8 (USA)
Fairchild Semiconductor FQI10N60CTU
If you need to check our product or price list, please leave your email and we will contact you within 24 hours. Clicking on the website skype will result in a faster response!
| Parameters | |
|---|---|
| Mfr | Fairchild Semiconductor |
| Series | QFET® |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 9.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 730mOhm @ 4.75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 57 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 2040 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 156W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK (TO-262) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| RoHS Status | ROHS3 Compliant |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 1,000 |
N-Channel 600 V 9.5A (Tc) 3.13W (Ta), 156W (Tc) Through Hole I2PAK (TO-262)
