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Fairchild Semiconductor FQI3P20TU
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| Parameters | |
|---|---|
| Mfr | Fairchild Semiconductor |
| Series | QFET® |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.4A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 8 nC @ 10 V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 52W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | I2PAK (TO-262) |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| RoHS Status | ROHS3 Compliant |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 1,000 |
P-Channel 200 V 2.8A (Tc) 3.13W (Ta), 52W (Tc) Through Hole I2PAK (TO-262)
