Parameters |
Mfr |
Fairchild Semiconductor |
Series |
QFET® |
Package |
Tube |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
200 V |
Current - Continuous Drain (Id) @ 25°C |
4.8A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
690mOhm @ 2.4A, 10V |
Vgs(th) (Max) @ Id |
5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
10 nC @ 10 V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
400 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
37W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220F-3 |
Package / Case |
TO-220-3 Full Pack |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
1,000 |
N-Channel 200 V 4.8A (Tc) 37W (Tc) Through Hole TO-220F-3