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Fairchild Semiconductor HUF75531SK8T

HUF75531SK8T


  • Manufacturer: EMAC, Inc.
  • Chip 1 Group NO: HUF75531SK8T
  • Price:
  • Datasheet: PDF
  • Description: HUF75531SK8T(Kg)
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Details

Tags

Parameters
Mfr Fairchild Semiconductor
Series UltraFET™
Package Bulk
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 82 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1210 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
RoHS Status ROHS3 Compliant
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
N-Channel 80 V 6A (Ta) 2.5W (Ta) Surface Mount 8-SOIC