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Fairchild Semiconductor HUF75637S3S

HUF75637S3S


  • Manufacturer: EMAC, Inc.
  • Chip 1 Group NO: HUF75637S3S
  • Price:
  • Datasheet: PDF
  • Description: HUF75637S3S(Kg)
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Details

Tags

Parameters
Mfr Fairchild Semiconductor
Series UltraFET™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 30mOhm @ 44A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 108 nC @ 20 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1700 pF @ 25 V
FET Feature -
Power Dissipation (Max) 155W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status ROHS3 Compliant
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 400
N-Channel 100 V 44A (Tc) 155W (Tc) Surface Mount D2PAK (TO-263)