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Fairchild Semiconductor KSB1116SYTA
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| Parameters | |
|---|---|
| Mfr | Fairchild Semiconductor |
| Series | - |
| Package | Bulk |
| Product Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 135 @ 100mA, 2V |
| Power - Max | 750 mW |
| Frequency - Transition | 120MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92-3 |
| RoHS Status | ROHS3 Compliant |
| ECCN | EAR99 |
| HTSUS | 8541.21.0075 |
| Standard Package | 2,000 |
Bipolar (BJT) Transistor PNP 50 V 1 A 120MHz 750 mW Through Hole TO-92-3
