Parameters |
Mfr |
Fairchild Semiconductor |
Series |
- |
Package |
Tube |
Product Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
200 V |
Current - Continuous Drain (Id) @ 25°C |
11A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
5V |
Rds On (Max) @ Id, Vgs |
500mOhm @ 5.5A, 5V |
Vgs(th) (Max) @ Id |
2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
59 nC @ 5 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
1585 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
98W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-220-3 |
Package / Case |
TO-220-3 |
RoHS Status |
ROHS3 Compliant |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
50 |
P-Channel 200 V 11A (Tc) 98W (Tc) Through Hole TO-220-3