Parameters | |
---|---|
Mfr | Infineon Technologies |
Series | HEXFET® |
Package | Tube |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
Rds On (Max) @ Id, Vgs | 40mOhm @ 17A, 10V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 5 V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 68W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | I-PAK |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Base Product Number | IRLU2705 |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
REACH Status | REACH Unaffected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Standard Package | 75 |