Parameters |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
40 V |
Current - Continuous Drain (Id) @ 25°C |
160A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
3.7mOhm @ 75A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
150 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
4340 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
200W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D²PAK (TO-263AB) |
Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Base Product Number |
AUIRF1404 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
800 |
Mfr |
Infineon Technologies |
Series |
HEXFET® |
Package |
Tape & Reel (TR) |
Product Status |
Active |
FET Type |
N-Channel |
N-Channel 40 V 160A (Tc) 200W (Tc) Surface Mount D²PAK (TO-263AB)