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Infineon Technologies AUIRF3315S

AUIRF3315S


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: AUIRF3315S
  • Price:
  • Datasheet: PDF
  • Description: AUIRF3315S(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series HEXFET®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V
Current - Continuous Drain (Id) @ 25°C 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 82mOhm @ 12A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 95 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1300 pF @ 25 V
FET Feature -
Power Dissipation (Max) 3.8W (Ta), 94W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001520202
Standard Package 1,000
N-Channel 150 V 21A (Tc) 3.8W (Ta), 94W (Tc) Surface Mount D2PAK