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Infineon Technologies BCP5216H6327XTSA1
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| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Last Time Buy |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
| Power - Max | 2 W |
| Frequency - Transition | 125MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | PG-SOT223-4-10 |
| Base Product Number | BCP52 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0075 |
| Standard Package | 1,000 |
Bipolar (BJT) Transistor PNP 60 V 1 A 125MHz 2 W Surface Mount PG-SOT223-4-10
