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Infineon Technologies BCR112WH6327XTSA1
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| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Last Time Buy |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 140 MHz |
| Power - Max | 250 mW |
| Mounting Type | Surface Mount |
| Package / Case | SC-70, SOT-323 |
| Supplier Device Package | PG-SOT323 |
| Base Product Number | BCR112 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.21.0075 |
| Standard Package | 3,000 |
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 140 MHz 250 mW Surface Mount PG-SOT323
