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Infineon Technologies BSB017N03LX3 G

BSB017N03LX3 G


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: BSB017N03LX3 G
  • Price:
  • Datasheet: PDF
  • Description: BSB017N03LX3 G(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series OptiMOS™
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 32A (Ta), 147A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 7800 pF @ 15 V
FET Feature -
Power Dissipation (Max) 2.8W (Ta), 57W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package MG-WDSON-2, CanPAK M™
Package / Case 3-WDSON
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 5,000
N-Channel 30 V 32A (Ta), 147A (Tc) 2.8W (Ta), 57W (Tc) Surface Mount MG-WDSON-2, CanPAK M™