Parameters |
Mfr |
Infineon Technologies |
Series |
SIPMOS® |
Package |
Tape & Reel (TR) |
Product Status |
Last Time Buy |
Technology |
MOSFET (Metal Oxide) |
Configuration |
N and P-Channel |
FET Feature |
Logic Level Gate |
Drain to Source Voltage (Vdss) |
60V |
Current - Continuous Drain (Id) @ 25°C |
3.1A (Ta), 2A (Ta) |
Rds On (Max) @ Id, Vgs |
110mOhm @ 3.1A, 10V, 300mOhm @ 2A, 10V |
Vgs(th) (Max) @ Id |
2V @ 20µA, 2V @ 450µA |
Gate Charge (Qg) (Max) @ Vgs |
22.5nC @ 10V, 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds |
380pF @ 25V, 460pF @ 25V |
Power - Max |
2W (Ta) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Package / Case |
8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package |
PG-DSO-8 |
Base Product Number |
BSO615 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
3 (168 Hours) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
2,500 |
Mosfet Array 60V 3.1A (Ta), 2A (Ta) 2W (Ta) Surface Mount PG-DSO-8