Call Us: 1(8457) SAMSON8 (USA)
Infineon Technologies BUZ31H3046XKSA1
If you need to check our product or price list, please leave your email and we will contact you within 24 hours. Clicking on the website skype will result in a faster response!
| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | SIPMOS® |
| Package | Tube |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 14.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Rds On (Max) @ Id, Vgs | 200mOhm @ 9A, 5V |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1120 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 95W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO262-3-1 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 1,000 |
N-Channel 200 V 14.5A (Tc) 95W (Tc) Through Hole PG-TO262-3-1
