Parameters |
Mfr |
Infineon Technologies |
Series |
SIPMOS® |
Package |
Tube |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
200 V |
Current - Continuous Drain (Id) @ 25°C |
5.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
5V |
Rds On (Max) @ Id, Vgs |
600mOhm @ 3.5A, 5V |
Vgs(th) (Max) @ Id |
2V @ 1mA |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
840 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
40W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
PG-TO220-3 |
Package / Case |
TO-220-3 |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
500 |
N-Channel 200 V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3