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Infineon Technologies BUZ73ALHXKSA1

BUZ73ALHXKSA1


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: BUZ73ALHXKSA1
  • Price:
  • Datasheet: PDF
  • Description: BUZ73ALHXKSA1(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series SIPMOS®
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200 V
Current - Continuous Drain (Id) @ 25°C 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 600mOhm @ 3.5A, 5V
Vgs(th) (Max) @ Id 2V @ 1mA
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 840 pF @ 25 V
FET Feature -
Power Dissipation (Max) 40W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3
Package / Case TO-220-3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 500
N-Channel 200 V 5.5A (Tc) 40W (Tc) Through Hole PG-TO220-3