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Infineon Technologies CY7C1010DV33-10VXI
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| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Asynchronous |
| Memory Size | 2Mbit |
| Memory Organization | 256K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 10ns |
| Access Time | 10 ns |
| Voltage - Supply | 3V ~ 3.6V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 36-BSOJ (0.400", 10.16mm Width) |
| Supplier Device Package | 36-SOJ |
| Base Product Number | CY7C1010 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | 3A991B2A |
| HTSUS | 8542.32.0041 |
| Standard Package | 950 |
SRAM - Asynchronous Memory IC 2Mbit Parallel 10 ns 36-SOJ
