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Infineon Technologies CY7C131E-55NXI
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| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tray |
| Product Status | Obsolete |
| Memory Type | Volatile |
| Memory Format | SRAM |
| Technology | SRAM - Dual Port, Asynchronous |
| Memory Size | 8Kbit |
| Memory Organization | 1K x 8 |
| Memory Interface | Parallel |
| Write Cycle Time - Word, Page | 55ns |
| Access Time | 55 ns |
| Voltage - Supply | 4.5V ~ 5.5V |
| Operating Temperature | -40°C ~ 85°C (TA) |
| Mounting Type | Surface Mount |
| Package / Case | 52-BQFP |
| Supplier Device Package | 52-PQFP (10x10) |
| Base Product Number | CY7C131 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8542.32.0041 |
| Standard Package | 96 |
SRAM - Dual Port, Asynchronous Memory IC 8Kbit Parallel 55 ns 52-PQFP (10x10)
