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Infineon Technologies DF200R12W1H3B27BOMA1
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| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tray |
| Product Status | Active |
| IGBT Type | - |
| Configuration | 2 Independent |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 30 A |
| Power - Max | 375 W |
| Vce(on) (Max) @ Vge, Ic | 1.3V @ 15V, 30A |
| Current - Collector Cutoff (Max) | 1 mA |
| Input Capacitance (Cies) @ Vce | 2 nF @ 25 V |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | -40°C ~ 150°C |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
| Base Product Number | DF200R12 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 24 |
IGBT Module 2 Independent 1200 V 30 A 375 W Chassis Mount Module
