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Infineon Technologies DF200R12W1H3B27BOMA1

DF200R12W1H3B27BOMA1


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: DF200R12W1H3B27BOMA1
  • Price: $72.22
  • Datasheet: PDF
  • Description: DF200R12W1H3B27BOMA1(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series -
Package Tray
Product Status Active
IGBT Type -
Configuration 2 Independent
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 30 A
Power - Max 375 W
Vce(on) (Max) @ Vge, Ic 1.3V @ 15V, 30A
Current - Collector Cutoff (Max) 1 mA
Input Capacitance (Cies) @ Vce 2 nF @ 25 V
Input Standard
NTC Thermistor Yes
Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount
Package / Case Module
Supplier Device Package Module
Base Product Number DF200R12
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 24
IGBT Module 2 Independent 1200 V 30 A 375 W Chassis Mount Module