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Infineon Technologies FF6MR12W2M1PB11BPSA1
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| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | CoolSiC™+ |
| Package | Tray |
| Product Status | Obsolete |
| Technology | Silicon Carbide (SiC) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 200A (Tj) |
| Rds On (Max) @ Id, Vgs | 5.63mOhm @ 200A, 15V |
| Vgs(th) (Max) @ Id | 5.55V @ 80mA |
| Gate Charge (Qg) (Max) @ Vgs | 496nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 14700pF @ 800V |
| Power - Max | 20mW (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Base Product Number | FF6MR12 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 18 |
Mosfet Array 1200V (1.2kV) 200A (Tj) 20mW (Tc) Chassis Mount
