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Infineon Technologies IDH20G65C6XKSA1
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| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 41A |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 20 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 67 µA @ 420 V |
| Capacitance @ Vr, F | 970pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | PG-TO220-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | IDH20G65 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Standard Package | 50 |
Diode 650 V 41A Through Hole PG-TO220-2
