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Infineon Technologies IDP20E65D2XKSA1
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| Parameters | |
|---|---|
| Other Names | SP001170100 |
| Standard Package | 50 |
| Mfr | Infineon Technologies |
| Series | - |
| Package | Tube |
| Product Status | Active |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 40A |
| Voltage - Forward (Vf) (Max) @ If | 2.2 V @ 20 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 32 ns |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| Capacitance @ Vr, F | - |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | PG-TO220-2-1 |
| Operating Temperature - Junction | -40°C ~ 175°C |
| Base Product Number | IDP20E65 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
Diode 650 V 40A Through Hole PG-TO220-2-1
