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Infineon Technologies IDW20G65C5BXKSA1
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| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | CoolSiC™+ |
| Package | Tube |
| Product Status | Discontinued at Digi-Key |
| Diode Configuration | 1 Pair Common Cathode |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) (per Diode) | 10A (DC) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 180 µA @ 650 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | PG-TO247-3 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Other Names | SP001224934 |
| Standard Package | 240 |
Diode Array 1 Pair Common Cathode 650 V 10A (DC) Through Hole TO-247-3
