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Infineon Technologies IDWD10G120C5XKSA1
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| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | CoolSiC™+ |
| Package | Tube |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Current - Average Rectified (Io) | 34A |
| Voltage - Forward (Vf) (Max) @ If | 1.65 V @ 10 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 80 µA @ 1200 V |
| Capacitance @ Vr, F | 730pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-247-2 |
| Supplier Device Package | PG-TO247-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | IDWD10 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.10.0080 |
| Standard Package | 30 |
Diode 1200 V 34A Through Hole PG-TO247-2
