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Infineon Technologies IMW120R090M1HXKSA1

IMW120R090M1HXKSA1


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: IMW120R090M1HXKSA1
  • Price: $12.32
  • Datasheet: PDF
  • Description: IMW120R090M1HXKSA1(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series CoolSiC™
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Current - Continuous Drain (Id) @ 25°C 26A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 15V, 18V
Rds On (Max) @ Id, Vgs 117mOhm @ 8.5A, 18V
Vgs(th) (Max) @ Id 5.7V @ 3.7mA
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 18 V
Vgs (Max) +23V, -7V
Input Capacitance (Ciss) (Max) @ Vds 707 pF @ 800 V
FET Feature -
Power Dissipation (Max) 115W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO247-3-41
Package / Case TO-247-3
Base Product Number IMW120
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 30
N-Channel 1200 V 26A (Tc) 115W (Tc) Through Hole PG-TO247-3-41