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Infineon Technologies IMW65R048M1HXKSA1
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| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | CoolSIC™ M1 |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 39A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 20.1A, 18V |
| Vgs(th) (Max) @ Id | 5.7V @ 6mA |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 18 V |
| Vgs (Max) | +23V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1118 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO247-3-41 |
| Package / Case | TO-247-3 |
| Base Product Number | IMW65R048 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 30 |
N-Channel 650 V 39A (Tc) 125W (Tc) Through Hole PG-TO247-3-41
