Parameters |
Mfr |
Infineon Technologies |
Series |
CoolSiC™ |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) |
650 V |
Current - Continuous Drain (Id) @ 25°C |
20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
18V |
Rds On (Max) @ Id, Vgs |
142mOhm @ 8.9A, 18V |
Vgs(th) (Max) @ Id |
5.7V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs |
15 nC @ 18 V |
Vgs (Max) |
+23V, -5V |
Input Capacitance (Ciss) (Max) @ Vds |
496 pF @ 400 V |
FET Feature |
- |
Power Dissipation (Max) |
75W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
PG-TO247-3-41 |
Package / Case |
TO-247-3 |
Base Product Number |
IMW65R107 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
30 |
N-Channel 650 V 20A (Tc) 75W (Tc) Through Hole PG-TO247-3-41