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Infineon Technologies IPA093N06N3GXKSA1

IPA093N06N3GXKSA1


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: IPA093N06N3GXKSA1
  • Price: $1.30
  • Datasheet: PDF
  • Description: IPA093N06N3GXKSA1(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Not For New Designs
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 43A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.3mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 34µA
Gate Charge (Qg) (Max) @ Vgs 48 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3900 pF @ 30 V
FET Feature -
Power Dissipation (Max) 33W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-31
Package / Case TO-220-3 Full Pack
Base Product Number IPA093
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 60 V 43A (Tc) 33W (Tc) Through Hole PG-TO220-3-31