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Infineon Technologies IPAN60R125PFD7SXKSA1
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| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | CoolMOS™PFD7 |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 7.8A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 390µA |
| Gate Charge (Qg) (Max) @ Vgs | 36 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1503 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 32W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | PG-TO220-FP |
| Package / Case | TO-220-3 Full Pack |
| Base Product Number | IPAN60 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 50 |
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FP
