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Infineon Technologies IPAN60R210PFD7SXKSA1

IPAN60R210PFD7SXKSA1


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: IPAN60R210PFD7SXKSA1
  • Price: $2.34
  • Datasheet: PDF
  • Description: IPAN60R210PFD7SXKSA1(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series CoolMOS™PFD7
Package Tube
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 210mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 4.5V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 23 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1015 pF @ 400 V
FET Feature -
Power Dissipation (Max) 25W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-FP
Package / Case TO-220-3 Full Pack
Base Product Number IPAN60
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 50
N-Channel 650 V 16A (Tc) 25W (Tc) Through Hole PG-TO220-FP