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Infineon Technologies IPB120N03S4L03ATMA1

IPB120N03S4L03ATMA1


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: IPB120N03S4L03ATMA1
  • Price:
  • Datasheet: PDF
  • Description: IPB120N03S4L03ATMA1(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 25 V
FET Feature -
Power Dissipation (Max) 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB120
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
N-Channel 30 V 120A (Tc) 79W (Tc) Surface Mount PG-TO263-3