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Infineon Technologies IPB60R330P6ATMA1

IPB60R330P6ATMA1


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: IPB60R330P6ATMA1
  • Price:
  • Datasheet: PDF
  • Description: IPB60R330P6ATMA1(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series CoolMOS™ P6
Package Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 330mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 4.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1010 pF @ 100 V
FET Feature -
Power Dissipation (Max) 93W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO263-3
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Base Product Number IPB60R
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP001364470
Standard Package 1,000
N-Channel 600 V 12A (Tc) 93W (Tc) Surface Mount PG-TO263-3