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Infineon Technologies IPD5N25S3430ATMA1

IPD5N25S3430ATMA1


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: IPD5N25S3430ATMA1
  • Price: $1.14
  • Datasheet: PDF
  • Description: IPD5N25S3430ATMA1(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Package Tape & Reel (TR)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 4V @ 13µA
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 422 pF @ 25 V
FET Feature -
Power Dissipation (Max) 41W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number IPD5N25
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 2,500
N-Channel 250 V 5A (Tc) 41W (Tc) Surface Mount PG-TO252-3-313