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Infineon Technologies IPI80N06S4L07AKSA1

IPI80N06S4L07AKSA1


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: IPI80N06S4L07AKSA1
  • Price:
  • Datasheet: PDF
  • Description: IPI80N06S4L07AKSA1(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Discontinued at Digi-Key
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 6.7mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 2.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs 75 nC @ 10 V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 5680 pF @ 25 V
FET Feature -
Power Dissipation (Max) 79W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO262-3
Package / Case TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number IPI80N
RoHS Status ROHS3 Compliant
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 500
N-Channel 60 V 80A (Tc) 79W (Tc) Through Hole PG-TO262-3