Parameters |
Mfr |
Infineon Technologies |
Series |
Automotive, AEC-Q101, OptiMOS™ |
Package |
Tube |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
60 V |
Current - Continuous Drain (Id) @ 25°C |
90A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
4mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id |
4V @ 90µA |
Gate Charge (Qg) (Max) @ Vgs |
128 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
10400 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
150W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
PG-TO262-3-1 |
Package / Case |
TO-262-3 Long Leads, I²Pak, TO-262AA |
Base Product Number |
IPI90N |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
500 |
N-Channel 60 V 90A (Tc) 150W (Tc) Through Hole PG-TO262-3-1