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Infineon Technologies IPL65R195C7AUMA1
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| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | CoolMOS™ C7 |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 195mOhm @ 2.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 290µA |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1150 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-VSON-4 |
| Package / Case | 4-PowerTSFN |
| Base Product Number | IPL65R |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 2A (4 Weeks) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 3,000 |
N-Channel 650 V 12A (Tc) 75W (Tc) Surface Mount PG-VSON-4
