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Infineon Technologies IPN60R1K0CEATMA1
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| Parameters | |
|---|---|
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 3,000 |
| Mfr | Infineon Technologies |
| Series | CoolMOS™ CE |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 1.5A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 130µA |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 280 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 5W (Tc) |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-SOT223-3 |
| Package / Case | TO-261-4, TO-261AA |
| Base Product Number | IPN60R1 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
N-Channel 600 V 6.8A (Tc) 5W (Tc) Surface Mount PG-SOT223-3
