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Infineon Technologies IPP90R1K0C3XK

IPP90R1K0C3XK


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: IPP90R1K0C3XK
  • Price:
  • Datasheet: PDF
  • Description: IPP90R1K0C3XK(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series CoolMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 900 V
Current - Continuous Drain (Id) @ 25°C 5.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 3.3A, 10V
Vgs(th) (Max) @ Id 3.5V @ 370µA
Gate Charge (Qg) (Max) @ Vgs 34 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 850 pF @ 100 V
FET Feature -
Power Dissipation (Max) 89W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO220-3-1
Package / Case TO-220-3
Base Product Number IPP90R
Moisture Sensitivity Level (MSL) Vendor Undefined
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP000413744
Standard Package 1
N-Channel 900 V 5.7A (Tc) 89W (Tc) Through Hole PG-TO220-3-1