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Infineon Technologies IPS090N03LGBKMA1

IPS090N03LGBKMA1


  • Manufacturer: FinishAdapt Limited
  • Chip 1 Group NO: IPS090N03LGBKMA1
  • Price:
  • Datasheet: PDF
  • Description: IPS090N03LGBKMA1(Kg)
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Details

Tags

Parameters
Mfr Infineon Technologies
Series OptiMOS™
Package Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 15 V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package PG-TO251-3-11
Package / Case TO-251-3 Stub Leads, IPak
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Names SP000252578
Standard Package 1,500
N-Channel 30 V 40A (Tc) 42W (Tc) Through Hole PG-TO251-3-11