Parameters |
Mfr |
Infineon Technologies |
Series |
CoolMOS™ P7 |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
700 V |
Current - Continuous Drain (Id) @ 25°C |
6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
900mOhm @ 1.1A, 10V |
Vgs(th) (Max) @ Id |
3.5V @ 60µA |
Gate Charge (Qg) (Max) @ Vgs |
6.8 nC @ 10 V |
Vgs (Max) |
±16V |
Input Capacitance (Ciss) (Max) @ Vds |
211 pF @ 400 V |
FET Feature |
- |
Power Dissipation (Max) |
30.5W (Tc) |
Operating Temperature |
-40°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
PG-TO251-3 |
Package / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
Base Product Number |
IPS70R900 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
75 |
N-Channel 700 V 6A (Tc) 30.5W (Tc) Through Hole PG-TO251-3