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Infineon Technologies IPT60R028G7XTMA1
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| Parameters | |
|---|---|
| Mfr | Infineon Technologies |
| Series | CoolMOS™ G7 |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 28.8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 1.44mA |
| Gate Charge (Qg) (Max) @ Vgs | 123 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 4820 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 391W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-2 |
| Package / Case | 8-PowerSFN |
| Base Product Number | IPT60R028 |
| RoHS Status | ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| REACH Status | REACH Unaffected |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 2,000 |
N-Channel 600 V 75A (Tc) 391W (Tc) Surface Mount PG-HSOF-8-2
